ccd linear image sensors back-thinned ccd image sensors with electronic shutter function S11155-2048-01 s11156-2048-01 www.hamamatsu.com 1 built-in electronic shutter high sensitivity from the ultraviolet region (spectral response range: 200 to 1100 nm) minimum integration time: 2 s readout speed: 10 mhz max. image lag: 0.1% typ. spectrometers image readout structure parameter S11155-2048-01 s11156-2048-01 pixel size (h v) 14 500 m 14 1000 m number of total pixels (h v) 2068 1 number of effective pixels (h v) 2048 1 image size (h v) 28.672 0.500 mm 28.672 1.000 mm horizontal clock phase 2-phase output circuit two-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outline) window * 1 quartz glass * 2 cooling non-cooled * 1: temporary window type (ex. s11155-2048n-01) is available upon request. * 2: resin sealing resistive gate structure in ordinary ccds, one pixel contains multiple electrodes and a signal charge is transferred by applying different clock pulses to those elec- trodes [figure 1]. in resistive gate structures, a single high-resistance electrode is formed in the active area, and a signal charge is trans- ferred by means of a potential slope that is created by applying different voltages across the electrode [figure 2]. compared to a ccd area image sensor which is used as a linear sensor by line binning, a one-dimensional ccd having a resistive gate structure in the active area offers higher speed transfer, allowing readout with low image lag even if the pixel height is large. [figure 1] schematic diagram and potential of ordinary 2-phase ccd [figure 2] schematic diagram and potential of resistive gate structure p1v p2v p1v p2v nn p nn - n - n - n - n n n - p + n p regl regh stg tg potential slope resistive gate kmpdc0320ea kmpdc0321eb the S11155-2048-01 and s11156-2048-01 are back-thinned ccd linear image sensors with an internal electronic shutter for spectrometers. these image sensors use a resistive gate structure that allows high-speed transfer. each pixel has a lengthwise size needed by spectrometers but ensures readout with low image lag. features applications
ccd linear image sensors S11155-2048-01, s11156-2048-01 2 absolute maximum ratings (ta=25 c) operating conditions (ta=25 c) parameter symbol min. typ. max. unit operating temperature * 3 * 4 topr -50 - +50 c storage temperature tstg -50 - +70 c output transistor drain voltage v od -0.5 - +25 v reset drain vol tage v rd -0.5 - +18 v output ampli er return voltage vret -0.5 - +18 v all reset drain voltage v ard -0.5 - +18 v horizontal input source voltage v ish -0.5 - +18 v all reset gate voltage v arg -10 - +15 v storage gate voltage v stg -10 - +15 v horizontal input gate vol tage v ig1h , v ig2h -10 - +15 v summing gate voltage v sg -10 - +15 v output gate vol tage v og -10 - +15 v reset gate voltage v rg -10 - +15 v transfer gate voltage v tg -10 - +15 v resistive gate voltage high v regh -10 - +15 v low v regl horizontal shift register clock voltage v p1h , v p2h -10 - +15 v note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. * 3: package temperature * 4: the sensor temperature may increase due to heating in high-speed operation. we recommend taking measures to dissipate heat a s needed. for more details, refer to the technical information ? resistive gate type ccd linear image sensors with electronic shutter ? . parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 18 v reset drain voltage v rd 14 15 16 v all reset drain voltage v ard 14 15 16 v all reset gate voltage high * 5 v argh 789 v low * 6 v argl -2 -1.5 -1 output gate voltage v og 2.5 3 3.5 v storage gate voltage v stg -0-v substrate voltage v ss -0-v resistive gate high voltage high v reghh -4.5 -4 -3.5 v low v reghl -9 -8 -7 resistive gate low voltage high v reglh -v reghh - 2.5 - v low v regll -9 -8 -7 output ampli er return voltage vret - 1 2 v test point horizontal input source v ish -v rd -v horizontal input gate v ig1h , v ig2h -9 -8 - v horizontal shift register clock voltage high v p1hh , v p2hh 456 v low v p1hl , v p2hl -8 -7 -6 summing gate voltage high v sgh 456 v low v sgl -8 -7 -6 reset gate voltage high v rgh 789 v low v rgl -6 -5 -4 transfer gate voltage high v tgh 8.5 9 9.5 v low v tgl -7.5 -7 -6.5 external load resistance r l 2.0 2.2 2.4 k * 5: all reset on * 6: all reset off
ccd linear image sensors S11155-2048-01, s11156-2048-01 3 electrical characteristics (ta=25 c) electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit signal output frequency fc - 5 10 mhz line rate lr - 2 4 khz horizontal shift register capacitance c p1h , c p2h - 200 - pf all reset gate capacitance c arg - 100 - pf resistive gate capacitance S11155-2048-01 c reg - 1000 - pf s11156-2048-01 - 2000 - summing gate capacitance c sg -10-pf reset gate capacitance c rg -10-pf transfer gate capacitance c tg - 100 - pf charge transfer ef ciency * 7 cte 0.99995 0.99999 - - dc output level vout 7 8 9 v output impedance zo - 300 - output ampli er return current iret - 0.4 - ma power consumption S11155-2048-01 p amp * 8 -75- mw p reg * 9 1.4 2.5 12.5 s11156-2048-01 p amp * 8 -75- p reg * 9 0.7 1.3 6.3 resistive gate resistance * 10 S11155-2048-01 r reg 0.5 2.5 4.5 k s11156-2048-01 1 5 9 * 7: charge transfer ef ciency per pixel of ccd shift register, measured at half of the full well capacity * 8: power consumption of the on-chip ampli er plus load resistance * 9: power consumption at reg * 10: resistance value between regh and regl parameter symbol S11155-2048-01 s11156-2048-01 unit min. typ. max. min. typ. max. saturation output voltage vsat - fw sv -- fw sv -v full well capacity * 11 fw - 200 - - 200 - ke - ccd node sensitivity sv 7 8 9 7 8 9 v/e - dark current * 12 non-mpp operation ds - 50 300 - 100 600 ke - /pixel/s mpp operation - 4 16 - 8 32 readout noise * 13 nr - 30 45 - 30 45 e - rms dynamic range * 14 dr - 6670 - - 6670 - - spectral response range - 200 to 1100 -- 200 to 1100 -nm photoresponse nonuniformity * 15 * 16 prnu - 3 10 - 3 10 % image lag * 15 * 17 l - 0.1 1 - 0.1 1 % * 11: operating voltages typ. * 12: dark current is reduced to half for every 5 to 7 c decrease in temperature. * 13: readout frequency is 2 mhz * 14: dynamic range (dr) = full well capacity / readout noise * 15: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 660 nm) fixed pattern noise (peak to peak) signal 100 [%] photoresponse nonuniformity = * 17: the ratio of remaining signal after the image sensor is illuminated with one shot of pulsed light that produces one-half of the saturation output. for more details refer to our technical information on ? resistive gate type ccd linear image sensors with electronic shutter. ? * 16:
ccd linear image sensors S11155-2048-01, s11156-2048-01 effective pixels effective pixels horizontal shift register note: when viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). however, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. to prevent this, provide light shield on that area as needed. thinning 15 14 13 2 3 4 5 6 7 8 9 10 11 12 thinning 23 22 21 20 19 16 1 24 17 18 resistive gate storage section horizontal shift register s2045 s2046 s2047 s2048 d5 d6 d7 d8 d9 d10 s1 s2 s3 s4 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 d1 d2 d3 d4 spectral response (without window) * 18 spectral transmittance characteristic of window material kmpdb0316ea kmpdb0303ea 4 * 18: spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. wavelength (nm) (typ. ta=25 c) quantum efficiency (%) 0 100 80 60 40 20 1200 200 400 600 800 1000 wavelength (nm) (typ. ta=25 c) transmittance (%) 0 100 80 90 70 50 30 10 60 40 20 1200 100 300 400 200 500 600 700 800 900 1000 1100 kmpdc0339ed device structure (conceptual drawing of top view in dimensional outline)
ccd linear image sensors S11155-2048-01, s11156-2048-01 5 timing chart kmpdc0382eb parameter symbol min. typ. max. unit arg pulse width tpwar 1 - - s rise and fall times tprar, tpfar 200 - - ns tg pulse width tpwv 2 - - s rise and fall times tprv, tpfv 20 - - ns p1h, p2h * 19 pulse width tpwh 50 100 - ns rise and fall times tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 50 100 - ns rise and fall times tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 5 15 - ns rise and fall times tprr, tpfr 5 - - ns tg - p1h overlap time tovr 1 2 - s integration time tinteg 2 - - s * 19: symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. kmpdc0382e 1 line output period tinteg (electronic shutter: open) tpwv tov r tpwr arg regh, regl tg p1h 1 d1 d2 d19 d20 d3..d10, s1...s2048, d11..d18 2 p2h sg rg os 3..2067 2070... n * 2068 2069 tpwar (electronic shutter: closed) normal readout period dummy readout period tpwh, tpws (regh=-4 v, regl=-6.5 v) * apply clock pulses to the specified terminals during the period of dummy readout. set the total number of clock pulses n, according to the integration time. non-mpp operation
ccd linear image sensors S11155-2048-01, s11156-2048-01 6 kmpdc0347ed parameter symbol min. typ. max. unit arg pulse width tpwar * 20 -- s rise and fall times tprar, tpfar 200 - - ns regh, regl pulse width tpwreg - tinteg - tpwv - s rise and fall times tprreg, tpfreg 100 - - ns tg pulse width tpwv 2 - - s rise and fall times tprv, tpfv 20 - - ns p1h, p2h * 21 pulse width tpwh 50 100 - ns rise and fall times tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 50 100 - ns rise and fall times tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 5 15 - ns rise and fall times tprr, tpfr 5 - - ns tg - p1h overlap time tovr 1 2 - s integration time tinteg 2 - - s * 20: the min. value of tpwar is equal to the normal readout period. * 21: symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. kmpdc0347e 1 line output period tinteg (electronic shutter: open) tpwv tov r tpwr arg regh, regl tg p1h 1 d1 d2 d19 d20 d3..d10, s1...s2048, d11..d18 2 p2h sg rg os 3..2067 2070... n * 2068 2069 tpwar (electronic shutter: closed) tpwreg (regh, regl=-8 v) normal readout period dummy readout period tpwh, tpws (regh=-4 v, regl=-6.5 v) * apply clock pulses to the specified terminals during the period of dummy readout. set the total number of clock pulses n, according to the integration time. mpp operation
ccd linear image sensors S11155-2048-01, s11156-2048-01 7 pin connections pin no. symbol function remark (standard operation) 1 os output transistor source r l =2.2 k 2 od output transistor drain +15 v 3 og output gate +3 v 4 sg summing gate same pulse as p2h 5 vret output ampli er return +1 v 6 rd reset drain +15 v 7 regl resistive gate (low) -6.5 v (non-mpp operation) 8 regh resistive gate (high) -4 v (non-mpp operation) 9 p2h ccd horizontal register clock-2 10 p1h ccd horizontal register clock-1 11 ig2h test point (horizontal input gate-2) -8 v 12 ig1h test point (horizontal input gate-1) -8 v 13 arg all reset gate 14 ard all reset drain +15 v 15 ish test point (horizontal input source) connect to rd 16 - 17 ss substrate gnd 18 rd reset drain +15 v 19 - 20 stg storage gate 0 v 21 - 22 - 23 tg transfer gate 24 rg reset gate kmpda0262ec dimensional outline (unit: mm) index mark photosensitive area 28.672 24 1 a 12 13 27.94 0.3 38.10 0.4 10.41 0.25 10.03 0.3 3.3 0.35 0.25 -0.03 +0.05 1.47 2.54 0.13 0.46 0.05 1.27 0.2 1.27 0.25 3.0 0.5 photosensitive surface 1.72 0.17 S11155-2048-01: a=0.500 s11156-2048-01: a=1.000 index mark
ccd linear image sensors S11155-2048-01, s11156-2048-01 cat. no. kmpd1118e05 aug. 2012 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice du e to improvements or other reasons. before assembly into fi nal products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of august, 2012. driver circuits for ccd linear image sensor (S11155-2048-01, s11156-2048-01) c11165-01 [sold separately] the c11165-01 is a driver circuit designed for hamamatsu ccd linear image sensors S11155-2048-01, s11156-2048-01. the c11165- 01 can be used in spectrometer when combined with the ccd linear image sensor. features built-in 16-bit a/d converter interface of computer: usb 2.0 operates by dc+5 v 8 related information http://jp.hamamatsu.com/sp/ssd/ccd_e.html resistive gate type ccd linear image sensors with electronic shutter technical information http://jp.hamamatsu.com/sp/ssd/tech_pre_en.html precautions for use (image sensors) precautions
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